hi-sincerity microelectronics corp. spec. no. : he6544 issued date : 1992.11.25 revised date : 2006.07.28 page no. : 1/5 hsd882s hsmc product specification hsd882s npn epitaxial planar transistor description the hsd882s is suited for the output stage of 0.75w audio, voltage regulator, and relay driver. absolute maximum ratings ? maximum temperatures storage temperature............................................................................................................ .................................. -55 ~ +150 c junction temperature ........................................................................................................... ............................. 150 c maximum ? maximum power dissipation total power dissipation (t a =25 c) ............................................................................................................................. ..... 750 mw ? maximum voltages and currents (t a =25 c) v cbo collector to base voltage ..................................................................................................... ......................................... 40 v v ceo collector to emitter voltage.................................................................................................. ......................................... 30 v v ebo emitter to base voltage ....................................................................................................... ............................................ 5 v i c collector current............................................................................................................. ..................................................... 3 a electrical characteristics (t a =25 c) symbol min. typ. max. unit test conditions bv cbo 40 - - v i c =100ua, i e =0 bv ceo 30 - - v i c =1ma, i b =0 bv ebo 5- -vi e =10ua, i c =0 i cbo --1uav cb =30v, i e =0 i ebo --1uav eb =3v, i c =0 *v ce(sat) --0.5vi c =2a, i b =200ma *v be(sat) --2vi c =2a, i b =200ma *h fe1 30 - - v ce =2v, i c =20ma *h fe2 160 - 500 v ce =2v, i c =1a f t -90-mhzv ce =5v, i c =0.1a, f=100mhz cob - 45 - pf v cb =10v, f=1mhz, i e =0 *pulse test: pulse width 380us, duty cycle 2% classification of h fe2 rank p e range 160-320 250-500 to-92
hi-sincerity microelectronics corp. spec. no. : he6544 issued date : 1992.11.25 revised date : 2006.07.28 page no. : 2/5 hsd882s hsmc product specification characteristics curve current gain & collector current 10 100 1000 1 10 100 1000 10000 collector current-i c (ma) hfe 25 o c 75 o c 125 o c hfe @ v ce =2v saturation voltage & collector current 10 100 1000 1 10 100 1000 10000 collector current-i c (ma) saturation voltage (mv) 25 o c 75 o c 125 o c v ce(sat) @ i c =10i b saturation voltage & collector current 10 100 1000 1 10 100 1000 10000 collector current-i c (ma) saturation voltage (mv) 25 o c 75 o c 125 o c v ce(sat) @ i c =40i b saturation voltage & collector current 10 100 1000 1 10 100 1000 10000 collector current-i c (ma) saturation voltage (mv) 25 o c 75 o c 125 o c v ce(sat) @ i c =20i b saturation voltage & collector current 100 1000 10000 1 10 100 1000 10000 collector current-i c (ma) saturation voltage (mv) 125 o c 25 o c 75 o c v be(sat) @ i c =10i b capacitance & reverse-biased voltage 10 100 0.1 1 10 100 reverse-biased voltage (v) capacitance (pf) cob
hi-sincerity microelectronics corp. spec. no. : he6544 issued date : 1992.11.25 revised date : 2006.07.28 page no. : 3/5 hsd882s hsmc product specification cutoff frequency & collector current 100 1000 1 10 100 1000 collector curren (ma) cutoff frequency (mhz) .. v ce =5v power derating 0 100 200 300 400 500 600 700 800 0 50 100 150 200 ambient temperature-ta( o c) power dissipation-pd (mw) safe operating area 0.01 0.1 1 10 100 1 10 100 forward biased voltage (v) collector current (ma ) pt=1ms pt=100ms pt=1s
hi-sincerity microelectronics corp. spec. no. : he6544 issued date : 1992.11.25 revised date : 2006.07.28 page no. : 4/5 hsd882s hsmc product specification to-92 dimension to-92 taping dimension important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of hsmc. ? hsmc reserves the right to make changes to its products without notice. ? hsmc semiconductor products are not warranted to be su itable for use in life-support applications, or systems. ? hsmc assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. head office and factory: ? head office (hi-sincerity microelectronics corp.): 10f.,no. 61, sec. 2, chung-shan n. rd. taipei taiwan r.o.c. tel: 886-2-25212056 fax: 886-2-25632712, 25368454 ? factory 1: no. 38, kuang fu s. rd., fu-kou hsin-chu industrial park hsin-chu taiwan. r.o.c tel: 886-3-5983621~5 fax: 886-3-5982931 3 1 a d b c i 1 e 2 3 g h 2 f h2a h2a h2 h2 d2 a h w w1 h3 h4 h1 l1 l p2 p p1 f1 f2 d1 d t2 t t1 dim min. max. a 4.33 4.83 b 4.33 4.83 c 12.70 - d 0.36 0.56 e-*1.27 f 3.36 3.76 g 0.36 0.56 h-*2.54 i-*1.27 1 - *5 2 - *2 3 - *2 *: typical, unit: mm 3-lead to-92 plastic package hsmc package code: a dim min. max. a 4.33 4.83 d 3.80 4.20 d1 0.36 0.53 d2 4.33 4.83 f1,f2 2.40 2.90 h 15.50 16.50 h1 8.50 9.50 h2 - 1 h2a - 1 h3 - 27 h4 - 21 l-11 l1 2.50 - p 12.50 12.90 p1 5.95 6.75 p2 50.30 51.30 t - 0.55 t1 - 1.42 t2 0.36 0.68 w 17.50 19.00 w1 5.00 7.00 unit: mm marking: pb free mark pb-free: " . " (note) normal: none control code date code hd 882 s s note: green label is used for pb-free packing pin style: 1.emitter 2.collector 3.base material: ? lead solder plating: sn60/pb40 (normal), sn/3.0ag/0.5cu or pure-tin (pb-free) ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0
hi-sincerity microelectronics corp. spec. no. : he6544 issued date : 1992.11.25 revised date : 2006.07.28 page no. : 5/5 hsd882s hsmc product specification soldering methods for hsmc?s products 1. storage environment: temperature=10 o c~35 o c humidity=65%15% 2. reflow soldering of surface-mount devices profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (t l to t p )<3 o c/sec <3 o c/sec preheat - temperature min (ts min ) - temperature max (ts max ) - time (min to max) (ts) 100 o c 150 o c 60~120 sec 150 o c 200 o c 60~180 sec ts m a x t o t l - ramp-up rate <3 o c/sec <3 o c/sec time maintained above: - temperature (t l ) - time (t l ) 183 o c 60~150 sec 217 o c 60~150 sec peak temperature (t p ) 240 o c +0/-5 o c 260 o c +0/-5 o c time within 5 o c of actual peak temperature (t p ) 10~30 sec 20~40 sec ramp-down rate <6 o c/sec <6 o c/sec time 25 o c to peak temperature <6 minutes <8 minutes 3. flow (wave) soldering (solder dipping) products peak temperature dipping time pb devices. 245 o c 5 o c 10sec 1sec pb-free devices. 260 o c 5 o c 10sec 1sec figure 1: temperature profile t p t l ramp-down ramp-up ts max ts min critical zone t l to t p t s preheat t l t p 25 t 25 o c to peak time temperature
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